发明名称 Image sensor device with aligned IR filter and dielectric layer and related methods
摘要 An image sensor device may include an interconnect layer, an image sensor IC adjacent the interconnect layer and having an image sensing surface, and a dielectric layer adjacent the image sensor IC and having an opening therein aligned with the image sensing surface. The image sensor device may also include an IR filter adjacent and aligned with the image sensing surface, and an encapsulation material adjacent the dielectric layer and laterally surrounding the IR filter.
申请公布号 US9419047(B2) 申请公布日期 2016.08.16
申请号 US201314135743 申请日期 2013.12.20
申请人 STMICROELECTRONICS (SHENZHEN) R&D CO., LTD. 发明人 Luan Jing-En
分类号 H04N5/33;H01L27/146;H04N5/225 主分类号 H04N5/33
代理机构 Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A. 代理人 Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
主权项 1. An image sensor device comprising: an interconnect layer comprising a first dielectric layer, and a plurality of electrically conductive vias extending through said first dielectric layer; an image sensor integrated circuit (IC) adjacent said interconnect layer and having an image sensing surface; at least one second dielectric layer adjacent said image sensor IC and having an opening therein aligned with the image sensing surface; an infrared (IR) filter adjacent and aligned with the image sensing surface; and an encapsulation material adjacent said at least one second dielectric layer and laterally contacting said IR filter around the periphery thereof.
地址 Nanshan, Shenzhen CN
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