High performance power cell for RF power amplifier

摘要

A power cell designed for an RF power amplifier comprises an enhancement MOSFET formed in an P-Well in an P-Substrate and a Schottky MOSFET formed in an N-Well in the same P-Substrate with a horizontal or a vertical channel between the source, drain, and gate electrodes of the Schottky MOSFET. The source node of the enhancement MOSFET and source node of the Schottky MOSFET are connected together to form the power cell.

主权项

1. A power cell designed for an RF power amplifier, comprising:
a first MOSFET formed in a P-Well in a P-Substrate; a second MOSFET formed in an N-Well in the same P-Substrate, the second MOSFET having a vertical channel, a source node, a drain node, and a gate electrode, wherein the vertical channel is formed in the N-Well between the source node and the drain node with components of the gate electrode on left and right sides of the vertical channel, wherein the components of the gate electrode on the left and right sides of the vertical channel are in direct contact with the vertical channel, and wherein components of the source node and the gate electrode are each arranged symmetrically on both sides of the drain node, respectively, to control current in the vertical channel in a vertical direction between the source node and the drain node and in a horizontal direction between the components of the gate electrode; wherein a source node of the first MOSFET and the source node of the second MOSFET are connected together to form the power cell.