METHOD OF BONDING A SEMICONDUCTOR DEVICE TO A SUPPORT SUBSTRATE

摘要

A method according to embodiments of the invention includes providing a wafer of semiconductor devices grown on a growth substrate. The wafer of semiconductor devices has a first surface and a second surface opposite the first surface. The second surface is a surface of the growth substrate. The method further includes bonding the first surface to a first wafer and bonding the second surface to a second wafer. In some embodiments, the first and second wafer each have a different coefficient of thermal expansion than the growth substrate. In some embodiments, the second wafer may compensate for stress introduced to the wafer of semiconductor devices by the first wafer

主权项

1. A device comprising:
a growth substrate; a semiconductor structure grown on the growth substrate, the semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region; and an n-contact in direct contact with the n-type region and a p-contact in direct contact with the p-type region; wherein the n-contact extends over an edge of the n-type region and is in direct contact with the growth substrate.