| 发明名称 |
SEMICONDUCTOR TEMPLATE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
The present invention provides a semiconductor template, comprising: a substrate; a buffer layer, disposed on a surface of the substrate and comprises a first sub-buffer layer and a second sub-buffer layer sequentially stacked, wherein the buffer layer has irregular cracks such that the top surface of the buffer layer is discontinuous, and the depth of the cracks are greater than or equal to the thickness of the second sub-buffer layer and less than or equal to sum of the thickness of the first sub-buffer and the second sub-buffer layer; and an epitaxial layer, which is a continuous layer and disposed on the buffer layer. |
| 申请公布号 |
US2016247886(A1) |
申请公布日期 |
2016.08.25 |
| 申请号 |
US201514626165 |
申请日期 |
2015.02.19 |
| 申请人 |
Hermes-Epitek Corp. |
发明人 |
LIN Po-Jung;WU Chih-Sheng;KOBAYASHI Takashi;CHUNG Bu-Chin |
| 分类号 |
H01L29/20;H01L21/304;H01L21/02 |
主分类号 |
H01L29/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor template, comprising:
a substrate; a buffer layer, disposed on a surface of the substrate and comprises a first sub-buffer layer and a second sub-buffer layer sequentially stacked, wherein the buffer layer has irregular cracks such that an top surface of the buffer layer is discontinuous, and the depth of the cracks are greater than or equal to the thickness of the second sub-buffer layer and less than or equal to sum of the thickness of the first sub-buffer and the second sub-buffer layer; and an epitaxial layer, which is a continuous layer and disposed on the buffer layer. |
| 地址 |
Taipei City TW |
