VERTICAL NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A vertical non-volatile memory device is structured/fabricated to include a substrate, groups of memory cell strings each having a plurality of memory transistors distributed vertically so that the memory throughout multiple layers on the substrate, integrated word lines coupled to sets of the memory transistors, respectively, and stacks of word select lines. The memory transistors of each set are those transistors, of one group of the memory cell strings, which are disposed in the same layer above the substrate. The word select lines are respectively connected to the integrated word lines.

主权项

1. A vertical non-volatile memory device comprising:
a substrate a first stack of word lines and a second stack of word lines extending in a first direction on the substrate, the first and second stack separated from each other in a second direction perpendicular to the first direction; first array lines extending in the second direction on the first and second stack, each of the first array lines connected to word lines of the first and the second stack through at least two of first via contacts in a same level; and first word select lines being in a same level and extending in the first direction, each of the first word select lines connected to each of the first array lines through at least one of second via contacts, wherein ends of each of the first and the second stack have a form of stairs on the substrate.