Methods of forming semiconductor device structures

摘要

A method of forming a semiconductor device structure. The method comprises forming a block copolymer assembly comprising at least two different domains over an electrode. At least one metal precursor is selectively coupled to the block copolymer assembly to form a metal-complexed block copolymer assembly comprising at least one metal-complexed domain and at least one non-metal-complexed domain. The metal-complexed block copolymer assembly is annealed in to form at least one metal structure. Other methods of forming a semiconductor device structures are described. Semiconductor device structures are also described.

主权项

1. A method of forming a semiconductor device structure, comprising:
forming a patterned dielectric material comprising at least one dielectric structure and at least one opening over an electrode; forming a polymer material over and in contact with at least a surface of the electrode exposed by the at least one opening; exposing the at least one dielectric structure and the polymer material to a staining agent to form a metal-complexed assembly comprising at least one metal-complexed polymer structure; treating the metal-complexed assembly to form at least one metal structure; forming an active material comprising one or more of a chalcogenide compound, a transition metal oxide, and a silicon oxide in contact with the at least one metal structure and the at least one dielectric structure; and forming a structure in contact with at least a portion of the active material at a position overlying the at least one metal structure.