Method of attaching a light emitting device to a support substrate

摘要

A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.

主权项

1. A method comprising:
bonding a wafer of semiconductor light emitting devices, each semiconductor light emitting device comprising a light emitting layer sandwiched between an n-type region and a p-type region, to a wafer of support substrates, each support substrate comprising a body; and after bonding the wafer of semiconductor light emitting devices to the wafer of support substrates, forming vias extending through the entire thickness of the body of each support substrate; wherein said bonding comprises bonding at a temperature less than 300° C., and wherein the at least one bonding layer comprises a first dielectric bonding layer formed on the wafer of semiconductor light emitting devices and a second dielectric bonding layer formed on the wafer of support substrates.