Trench polysilicon diode

摘要

Embodiments of the present invention include a method of manufacturing a trench transistor. The method includes forming a substrate of a first conductivity type and implanting a dopant of a second conductivity type, forming a body region of the substrate. The method further includes forming a trench in the body region and depositing an insulating layer in the trench and over the body region wherein the insulating layer lines the trench. The method further includes filling the trench with polysilicon forming a top surface of the trench and forming a diode in the body region wherein a portion of the diode is lower than the top surface of the trench.

主权项

1. A temperature sensor device comprising:
a first trench diode electrically coupled to a first pin and a second pin wherein a portion of said first trench diode is under the surface of a N− (P−) type epitaxial region; and a second trench diode coupled to said first pin and said second pin wherein said first trench diode and said second trench diode are coupled in anti-parallel.