发明名称 LOW NOISE AMPLIFIER CIRCUIT
摘要 A low noise amplifier circuit includes a first amplifier including a first transistor and a second transistor that are cascode-connected to each other; a second amplifier including a third transistor and a fourth transistor that are cascode-connected to each other; a source terminal matcher connected to a source of the first transistor and a source of the third transistor; and an input matcher providing input that is impedance-matched by a first inductor and a second inductor to a gate of the first transistor and providing input which is impedance-matched by the first inductor to a gate of the third transistor. The circuit is able to operate in a dual-band and provide impedance matching, while being simpler than alternative circuits.
申请公布号 US2016268980(A1) 申请公布日期 2016.09.15
申请号 US201514976813 申请日期 2015.12.21
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 SEONG Nack Gyun;PARK Sung Hwan;HA Sang Hoon;KIM Sang Hee;KIM Nam Heung;PARK Sang Wook
分类号 H03F1/56;H03F3/16;H03F1/02 主分类号 H03F1/56
代理机构 代理人
主权项 1. A low noise amplifier circuit comprising: a first amplifier comprising a first transistor and a second transistor that are cascode-connected to each other; a second amplifier comprising a third transistor and a fourth transistor that are cascode-connected to each other; a source terminal matcher connected to a source of the first transistor and a source of the third transistor; and an input matcher providing input that is impedance-matched by a first inductor and a second inductor into a gate of the first transistor and providing input that is impedance-matched by the first inductor into a gate of the third transistor.
地址 Suwon-si KR