发明名称 |
LOW NOISE AMPLIFIER CIRCUIT |
摘要 |
A low noise amplifier circuit includes a first amplifier including a first transistor and a second transistor that are cascode-connected to each other; a second amplifier including a third transistor and a fourth transistor that are cascode-connected to each other; a source terminal matcher connected to a source of the first transistor and a source of the third transistor; and an input matcher providing input that is impedance-matched by a first inductor and a second inductor to a gate of the first transistor and providing input which is impedance-matched by the first inductor to a gate of the third transistor. The circuit is able to operate in a dual-band and provide impedance matching, while being simpler than alternative circuits. |
申请公布号 |
US2016268980(A1) |
申请公布日期 |
2016.09.15 |
申请号 |
US201514976813 |
申请日期 |
2015.12.21 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
SEONG Nack Gyun;PARK Sung Hwan;HA Sang Hoon;KIM Sang Hee;KIM Nam Heung;PARK Sang Wook |
分类号 |
H03F1/56;H03F3/16;H03F1/02 |
主分类号 |
H03F1/56 |
代理机构 |
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代理人 |
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主权项 |
1. A low noise amplifier circuit comprising:
a first amplifier comprising a first transistor and a second transistor that are cascode-connected to each other; a second amplifier comprising a third transistor and a fourth transistor that are cascode-connected to each other; a source terminal matcher connected to a source of the first transistor and a source of the third transistor; and an input matcher providing input that is impedance-matched by a first inductor and a second inductor into a gate of the first transistor and providing input that is impedance-matched by the first inductor into a gate of the third transistor. |
地址 |
Suwon-si KR |