| 摘要 |
<p>PURPOSE:To enlarge the capacity of a storage device by installing a reference potential terminal control circuit which sets and controls the value up to a high potential level of an external input according to the detection output signal of a high potential detection circuit. CONSTITUTION:A high potential detection circuit 11 which detect whether the input of a Vpp power source terminal 31 is a high potential Vpp, a reference potential terminal control circuit 12 which sets and controls the potential impressed to a reference potential terminal A according to the detection output signal of this high potential detection circuit 11, and a MOS transistor P3 of P channels connected parallel to a channel transistor P2 of a NOR circuit 32 of two input, are added. Then, the element can be made finer without scaling the high potential for conventional write-in or the high potential of ternary control. Thus, the capacity of the storage device can be enlarged.</p> |
