发明名称 PRODUCTION OF POLYSILANE THIN FILM
摘要 PURPOSE:To use various monomers by electrochemically reducing a silicon halide derivative dissolved in an org. solvent to form a polysilane thin film on an electrode. CONSTITUTION:A silicon halide derivative dissolved in an org. solvent is electrochemically reduced to form a polysilane thin film on an electrode. Consequently, various monomers can be used, and variegated polysilane thin films are easily formed with good reproducibility. Since an extremely thin film is formed in this case, the film is effectively utilized as the precursor for the resist material, electrode material, semiconductor material and ceramics from the standpoint of its electrical and optical characteristics.
申请公布号 JPH04141596(A) 申请公布日期 1992.05.15
申请号 JP19900259020 申请日期 1990.09.28
申请人 TOSHIBA CORP 发明人 NAITO KATSUYUKI
分类号 G03F7/075;C08G77/60;C25B3/04;H01L21/027 主分类号 G03F7/075
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