| 摘要 |
<p>1,233,139. Semi-conductor devices. ITT INDUSTRIES Inc. 2 April, 1969 [3 April, 1968], No. 17330/69. Heading HIK. A plurality of semi-conductor devices such as the diode shown are produced, e.g. by epitaxy and/or diffusion, in a semi-conductor wafer and one surface of the wafer is provided with a first dielectric passivating layer 5, e.g. of 8i0 2 , and a second dielectric layer 9 of a glass frit. Channels 10 are formed mechanically through the layer 9 around each individual device, the layer 9 is fused, e.g. by heating the wafer to about 640‹ C., and the wafer is scribed and diced along the lines of the channels 10. In the embodiment, each diode comprises an N-type epitaxial or diffused layer 2 on an N+ substrate 1, and N+ and P type diffused regions 4, 3 in the upper surface. The lower electrode 8 is made of Sn coated Ag, while the upper electrode 6 comprises an Au layer on the P type region 3, an Ag dot electroplated thereon and a Ni plating over the Ag. The glass may be removed from the electrode 6 by silk screening prior to fusion or by etching after fusion.</p> |
