| 摘要 |
1,151,730. Magnetic storage arrangements; transistor pulse generating circuits. TEXAS INSTRUMENTS Inc. 15 Sept., 1966 [15 Sept., 1965], No. 41299/66. Headings H3B and H3T. An anisotropic thin film storage element is read out non- destructively by a short duration current pulse which only partially rotates the flux towards the hard direction, the pulse being of less than 5 nanoseconds duration and having an amplitude exceeding that of the word and digit write current pulses. In a matrix store the element may be a discrete region of a continuous storage film formed on a conductive substrate such as aluminium, the film being overlaid with orthogonal word and digit copper strip conductors insulated by layers of polyethylene terephthalate. The read pulse generating circuit as shown in Fig. 6, uses a step recovery diode circuit comprising a charge storage diode 74 and a shorted stub 71 in association with a capacitor 73 and variable resistor 72. The read pulse is produced at terminals 61, 62 in response to a read command pulse RWC which turns on transistors 75, 76, the read pulse passing to a word line 43 selected by opening a transistor gate pair 67. For writing, a write command pulse WWC is applied at terminal 82 which turns on transistors 78, 79 and 80 to allow word current to pass through diode 81 to the selected word line, the word current reverse-biasing diode 64 and effectively isolating stub 71 from the gate transistors 67. |
