| 摘要 |
1,211,354. Silicon oxynitride coatings. GENERAL ELECTRIC CO. 6 Oct., 1967 [1 Dec., 1966], No. 45670/67. Heading C1A. [Also in Divisions C7 and H1] An insulating protective coating for a semiconductor device comprises a glass including silicon, oxygen, and nitrogen in a solidified amorphous state. The glass (silicon oxynitride) exists as a ternary composition, although it appears from the Specification that it may be desirable to incorporate a small proportion of hydrogen, and its properties would seem to lie between those of silicon dioxide and silicon nitride. Preferred proportional percentages by weight of the constituents are: Si : 46-60%; 0 : 1-50%; N : 1-35%. A preferred method of depositing such a coating on silicon involves the pyrolytic decomposition of a mixture of silane, ammonia and oxygen. The oxygen may be replaced by nitrous oxide or nitric oxide and the ammonia may be used as a carrier gas for the process (in which case about 98% NH 3 is used) or a separate carrier gas such as H 2 may be used. The semi-conductor body is heated by induction heating to a temperature in the range 800-1200‹ C. and the reacting gases are then introduced in suitable proportion. For deposition on germanium or gallium arsenide alternative methods such as glow discharge dissociation of suitable gases at a comparatively low temperature or sputtering silicon in an atmosphere of oxygen and nitrogen, may be preferable. |
