发明名称 |
Sperrschichtfreies Halbleiterbauelement fuer Schaltzwecke |
摘要 |
Described is a barrier-free semiconductor component for switching, having at least two electrodes. The component is characterized by the fact that its semiconductor body is comprised of strontium vanadate with sporadic vanadium oxide inclusions. |
申请公布号 |
DE1764373(A1) |
申请公布日期 |
1971.07.08 |
申请号 |
DE19681764373 |
申请日期 |
1968.05.27 |
申请人 |
SIEMENS AG |
发明人 |
DR. GUNTERSDORFER,MAX,DIPL.-PHYS. |
分类号 |
H01C7/00;H01L45/00 |
主分类号 |
H01C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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