| 摘要 |
<p>PURPOSE:To decrease the fluctuation of pattern position precision, reduce the number of X-ray mask processes, and improve yield, by a method wherein, after an isolation pattern is previously formed by first image drawing and etching, second image drawing and etching is performed. CONSTITUTION:After silicon carbide 3 and tantalum 4 turning to an X-ray absorber are grown on a silicon substrate 2, the substrate 2 is stuck on a reinforcement frame 1 by using adhesive agent. An X-ray absorber shielding frame 7 and an isolation pattern for diving a pattern region 8 for a semiconductor device from other regions are previously formed by first image drawing and etching. Thereby the strain inside the X-ray absorber 4 is previously released. After that, by performing a second image drawing and etching of the region 8, the initial length of the second etching is decreased, and the strain can be reduced. When two or more semiconductor device (chips) are formed, the image drawing and etching for diving the chips is performed, and further position alignment mark is formed. Thereby the strain is further reduced, and the precision of the second image drawing and etching can be improved.</p> |
