发明名称 THIN-FILM DEVICE, DISPLAY DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE
摘要 <p>PURPOSE:To diminish steps to prevent the remaining of an i type semiconductor layer and the flow of a leak current in adjacent signal lines by providing a non-anodically oxidized part in the parts where wirings intersect. CONSTITUTION:The non-anodically oxidized part NAP which is not provided with the anodically oxidized film AOF is provided in at least a part between the signal lines GL of the wirings in the thin-film device which is provided with the film AOF on the wirings and an insulating film GI thereon, is provided with the signal lines GL crossing the wirings and is provided with the semiconductor layer AS in the parts exclusive of the wirings on the film GI. The non- anodically oxidized part NAP is also provided even in the display device which is provided with the AOF on the wirings and the film GI thereon, is provided with the video signal lines GL crossing the wirings and is provided with the semiconductor layer AS in the parts exclusive of the wirings on the film GI, by which the remaining of the i type semiconductor layer AS is prevented.</p>
申请公布号 JPH04182628(A) 申请公布日期 1992.06.30
申请号 JP19900311363 申请日期 1990.11.19
申请人 HITACHI LTD 发明人 SASANO AKIRA;SHIROHASHI KAZUO;MATSUKAWA YUKA;TANIGUCHI HIDEAKI;YAMAMOTO HIDEAKI;MATSUMARU HARUO
分类号 G02F1/1343;G02F1/136;G02F1/1368;H01L27/12;H01L29/78;H01L29/786 主分类号 G02F1/1343
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