| 摘要 |
1282970 Semi-conductor devices SIEMENS AG 4 Nov 1970 [6 Nov 1969] 52365/70 Heading H1K In a semi-conductor device such as a transistor or thyristor a circular emitter region 1 is provided with a central circular contact 4 and one or more spaced concentric annular contacts 7 whose widths, when there is a plurality of them, decrease with increasing radius, all the emitter contacts 4, 7 being connected together above an insulating layer provided on the emitter region 1. In a modification the central circular contact 4 is replaced by another annular contact. The contacts 4, 7 are preferably of Al. An annular base contact 8 having a portion of enlarged width corresponding in outline to the plan configuration of the base-collector junction may also be provided. |
