| 摘要 |
PURPOSE:To provide a low-cost light-emitting diode with simplified processes by forming an active layer that emits first light when energized, and forming a photoluminescent layer that produces second light of a wavelength longer than the first light in response to the first light. CONSTITUTION:A double-heterojunction light-emitting diode 10 of a surface emission type includes a laminate on a substrate 12. The laminate includes a reflective photoluminescent layer 14, a clad layer 16, an active layer 18, a clad layer 20, and a contact layer 22. The reflective photoluminescent layer 14 has a superlattice structure, in which p-AlAs layers 30 and p-GaAs layers 32 are alternately laminated. This layer 14 reflects part of light from the active layer 18 by optical interference, while it absorbs part of light from the active layer 18 to produce light of a longer wavelength than that of the input light. |
