发明名称 HALBLEITERGLEICHRICHTERANORDNUNG.
摘要 1,191,887. Semi-conductor devices. GENERAL ELECTRIC CO. 29 Aug., 1967 [2 Sept., 1966], No. 39454/67. Heading H1K. One or more semi-conductor rectifiers 11 are mounted in an assembly comprising at least two, and preferably at least three, parallel pillars composed of axially aligned conductors 20/21, 26/27 &c., the or each device 11 being situated between a pair of conductors 20, 21 in one of the pillars, and subjected to clamping pressure by a tension member such as a bolt 34, opposite ends of which are mechanically joined to opposite ends of each pillar. In the form shown, there is a single Si thyristor 11 comprising a wafer 12 enclosed between electrodes 13, 14 and hermetically sealed by a ceramic cylinder 15. Copper conductors 20, 21 carry terminals 46, 47 and cooling fins 50, 51 between which cooling air is forced. The assembly may be placed in a duct 55, or the fins 50, 51 may be shaped to provide ducts. An insulating baffle 56 encloses both the device 11 and insulating spaces 30 situated between the conductors 26, 27 &c. in the other two pillars. The form of the baffle 56 may also be modified to define air ducts. Pressure is transmitted evenly to the three pillars by spring washers 37, insulating means 40, 41 being provided to isolate the device and its terminals from the pressure assembly. This embodiment may be modified by the inclusion of two devices 11 in series within a single pillar, a third conductor (61), Fig. 4 (not shown), being situated axially between the two outer conductors (20, 21) of the pillar containing the devices. Alternatively a parallel or inverse-parallel arrangement of two or more thyristors or diodes or both may be formed by including a device in each of two or more of the pillars. In one such arrangement having two thyristors in inverse-parallel relation a control circuit (127), Fig. 10c (not shown), for the gate electrodes is mounted between the conductors (128, 129) of a third pillar. Figs. 7-9 (not shown) illustrate an inverse-parallel two-thyristor arrangement in which the cooling fins of Fig. 2 are replaced by water-cooled heat sinks at opposed ends of the assembly, with water circulating through spiral ducts in the sinks. Two alternative 3-phase bridge rectifier assemblies of diodes, Figs. 10d, 10e (not shown), are also described.
申请公布号 DE6609863(U) 申请公布日期 1972.10.19
申请号 DE19660009863U 申请日期 1967.09.01
申请人 GENERAL ELECTRIC CO 发明人
分类号 H01L23/40;H01L23/467;H01L25/03;H01L25/11 主分类号 H01L23/40
代理机构 代理人
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