| 摘要 |
PURPOSE:To obtain a blue light emitting diode of high brightness by a method wherein a specific compound semiconductor layer containing chlorine is made to serve as at least one of epitaxial light emitting layers. CONSTITUTION:Light emitting layers 3 and 4 are formed of II-VI compound semiconductor or II-VI eutectic compound semiconductor such as ZnS, ZnSe semiconductor or the like through an epitaxial growth method, and electrodes 5 and 6 are provided to enable a current to flow through the light emitting layers 3 and 4 to constitute a current injection type compound semiconductor light emitting element, where at least the light emitting layer 3 out of the layers 3 and 4 is formed of II-VI compound semiconductor to which Cl is added. Moreover, it is preferable that a ZnS layer or a ZnSe layer is made to serve as the light emitting layer 3. A single crystal substrate 1 is formed of bulk single crystal of ZnS, ZnSe, or ZnSSe formed through an iodine transport method. ZnS is adapted for a substrate, because Zn is high in transmission to light of blue light region. |
