| 摘要 |
PURPOSE:To increase the degree of integration, by providing a U-shaped cut-in region on one main surface of a semiconductor substrate, and providing in this region a gate electrode which controls the current flowing between source and drain. CONSTITUTION:n<+>-Region 1, p-region 2, n-region 3 and n<+>-substrate 4 are respectively source, channel, drain high resistance region and drain. A U-groove is covered with SiO2 insulating film 6, and gate electrode 5 is made of metal or low-resistance poly-Si. n<+>-Region 1 and substrate 4 are provided with an electrode. In this structure, the current flowing from drain to souce is controlled by the potential barrier produced on the front surface of the source. Voltage resistance is improved by n-region 3. Further, since the U-groove has a higher rate of area utilization than a V-groove, it is possible to arrange a channel densely, so that the current density is increased. |
