| 摘要 |
PURPOSE:To obtain a negative type resist material for an electron beam with high sensitivity, high resolution, superior adhesion and superior heat resistance by using a copolymer consisting of glycidyl methacrylate (GMA) and methyl methacrylate (MMA) in a specified ratio. CONSTITUTION:A copolymer consisting of 30-70mol% GMA and the balance MMA is dissolved in chlorobenzene, and this soln. is applied to a wafer by a spin coating method or other method to form a film of about 1mu thickness. The film is prebaked at 130 deg. for about 30min and irradiated with electron beams to draw a pattern. The nonirradiated part is then removed by development with methyl ethyl ketone or the like to obtain a pattern having an almost perfect rectangular section and slightly generating scum. This resist film has <=0.1mu resolving power and shows superior adhesion, heat resistance and etching resistance. This resist material is most suitable for use in the manufacture of LSI, etc. |
