| 摘要 |
PURPOSE:To form fine wiring patterns of high density integrated circuits accurately with good reproducibility by etching a sample by means of a chlorine type gas while maintaining the temp. of Al (alloy) which is the sample at a specific temp. range. CONSTITUTION:A chlorine type gas of low pressure is flowed in a vacuum etching chamber 1, and a high frequency electric field is applied by a high frequency electric power source to cause glow discharge and turn the chlorine type gas to plasma. The surface of an Al or Al alloy sample 4 masked with a resist film is etche by the ions and radicals in this plasma. At this time, the temp. of the sample 4 is detected by measuring the intensity of the IR rays generated from the sample 4 with an IR thermometer 8. Cooling water or a heater 6 is automatically controlled with the thermometer 8 so as to maintain the temp. thereof in a 50-130 deg.C, more preferably, 50-80 deg.C temp. range. |
