| 摘要 |
PURPOSE:To improve integration density by miniaturization of a subcontact region and, in addition, to shorten etching time by settling an interface between a metallic layer for an electrode of a subcontact region and a semiconductor substrate shallower than an interface between the field oxide film and semiconductor substrate. CONSTITUTION:An SiO2 film and Si2N4 film are deposited on a P type silicon substrate 21 and patterning is made by PEP to form a field oxide film 26 by thermal oxidation. Then, an element forming region 27 and the subcontact region 28 are produced. N type impurities are diffused into the element forming region 27 to form N<+> regions 31, 32. After an SiO2 film 33 is formed over the entire face of the substrate by CVD, the source, drain and subcontact regions are provided by PEP and a contact hole 34 is formed. Next, electrodes and interconnection are produced by evaporation and patterning of a metallic layer 36. This permits the interface between the metallic layer 36 of the subcontact region 28 and the substrate 21 to be shallower than the interface between the field oxide film 26 and the substrate 21 so as to be able to shorten the etching time and to improve integration density by miniaturization of the subcontact region. |
