| 摘要 |
PURPOSE:To raise the transmission factor of a transparent electrode and make flat the wavelength characteristic of an image pickup device by forming a special conductive film on a transparent insulation substrate and providing a photoelectric screen which forms a semiconductor layer on the pertinent conductive film. CONSTITUTION:In the figure, 21 is a glass and 22 is a transparent electrode. Apart from the conventional layer, however, the material is a layer at least consisting from either CdIn2O4-x (0<=x<1) or CdIn2-xSnO4(0<=x<1). Besides, 23 is an (n) type a-Si layer, 24 is an a-Si high/resistance layer, and 25 is an Sb2S3 layer. The film thicknesses of each layer are as follows: The transparent electrode is approximately 1000Angstrom , the n type a-Si layer is approximately 800Angstrom , the high resistance a-Si layer is 4 to 6mum, and the Sb2S3 layer is approximately 500Angstrom . The transmission factor of the transparent electrode is increased approximately 10% for the light of wavelength 500mum as compared with the conventional one and the transparent characteristic of the transparent electrode also becomes very flat in the visible region. Since the photoelectric characteristic of the a-Si layer has also a flat sensitivity for visible light, the whole sensitivity of an image pickup device also becomes very flat. |
