| 摘要 |
PURPOSE:To expand a function margin on a reading at high speed easily by each forming transistors for reading/writing in a memory cell in a walled emitter structure and a transistor for holding in a non-walled emitter structure and making current amplification factors of the transistors for reading/writing larger than that of the transistor for holding in a bipolar type semiconductor memory storage using a flip-flop circuit as the memory cell. CONSTITUTION:5 represents patterns severally prescribing an isolation region 50 on a silicon semiconductor substrate 10, 6 ones severally prescribing collector extracting sections and 71, 72 ones severally prescribing emitters 710, 720. The ends of the P-N junctions of P type bases 8 are positioned at the side surface of the isolation region 50 consisting of a select oxide film at that time, and the bases 8 take walled structure. With the N type emitters, on the other hand, the emitter 71 of transistors Q11, Q21 for reading/writing takes walled structure in two directions, but the emitter 72 transistors Q12, Q22 for holding takes non- walled structure. |
