发明名称 SEMICONDUCTOR LASER ARRAY DEVICE
摘要 PURPOSE:To obtain two different wavelengths by forming current injection regions to a section just above a groove section between two parallel ridges on a substrate and a section just above an active-layer bent section generated by a stepped section on the outside of a ridge section. CONSTITUTION:When currents are injected in order to drive a laser C formed in ridge sections, beams generated in an active layer are confined in a groove section between the ridges and oscillate because they are absorbed to a substrate 1 on the ridges. On the other hand, when currents are injected in order to drive a laser D formed in a stepped section, beams generated in the active layer are confined in the active-layer bent section of the stepped section and oscillate because they are absorbed to the substrate 1 in a flat section except the stepped section. Since a growth rate in the active-layer bent section as the oscillating section of the laser D is faster than that in the oscillating section of the laser C, the wavelength of oscillation of the laser D is made longer than that of the laser C, and two different wavelengths can be obtained.
申请公布号 JPS59231886(A) 申请公布日期 1984.12.26
申请号 JP19830106122 申请日期 1983.06.14
申请人 MATSUSHITA DENKI SANGYO KK 发明人 HAMADA TAKESHI;WADA MASARU;SHIMIZU YUUICHI;ITOU KUNIO;KUME MASAHIRO;TAJIRI FUMIKO
分类号 H01S5/00;H01S5/40;(IPC1-7):H01S3/18 主分类号 H01S5/00
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