| 摘要 |
PURPOSE:To readily control a plasma, to prevent the surface of a semiconductor substrate from charging up and to selectively react charged particles or neutral particles by utilizing a plasma in a pure torus magnetic field. CONSTITUTION:A torus vacuum vessel 1 is evacuated in high vacuum, and purified by the glow discharge of hydrogen. Gas for generating a plasma is fed into the vessel 1, and a current is flowed to a toroidal coil 2 to generate a toroidal magnetic field. A microwave is incident from a port to the vessel 1, and when the frequency coincides with an electron cyclotron resonant frequency, a plasma 8 is generated. The diameter of the plasma is controlled by an orifice, a semiconductor substrate 7 is fed to a port without setting the entire vessel 1 to atmospheric pressure by using a load lock, and held by a manipulator 6. Accordingly, the plasma 8 can be readily controlled, it can prevent the surface of the substrate 7 from charging up and to selectively react charged particles and neutral particles. |
