| 摘要 |
<p>A plasma etching apparatus comprising a susceptor (12, 14) for holding a semiconductive wafer, a cooling jacket (20) having a coolant (21) of a large cooling capacity and capable of quickly cooling said susceptor (12, 14) to an intended low temperature, a process chamber (10a) enclosing the susceptor (12, 14) and the cooling jacket (20), a gas discharging mechanism (34, 36) for evacuating the process chamber (10a), an insulating member (16) interposed between the susceptor (12, 14) and the cooling jacket (20), a gas supply device (71, 80) for supplying gas to an O-ring holding groove (51, 53, 55) arranged on the interface regions (59) of the susceptor (12, 14), the insulating member (16) and the cooling section (20) and a pressure control mechanism (70) for controlling the pressure of the supplied gas. <IMAGE></p> |
