| 摘要 |
<p>A process for selectively removing a silicon nitride film from a silicon layer surface having a silicon oxide film and a silicon nitride film, includes the steps of: preparing a gas including at least hydrogen fluoride vapor, and supplying the gas to the silicon layer surface while maintaining the temperature of the silicon layer surface within a predetermined range that is higher than the gas. The gas includes a predetermined oxidizing agent, for example, HNO3, O3, H2O2, HC l O, HC l O3, HNO2, O2, H2SO4, C l 2 and Br2. The temperature of the silicon layer surface is maintained 10 DEG C to 90 DEG C, preferably 15 DEG C to 60 DEG C, more preferably 20 DEG C to 45 DEG C higher than the temperature of the gas. <IMAGE></p> |
