| 发明名称 |
LITHIUM NIOBATE ETCHING AGENT |
| 摘要 |
Oxides of a tantalum and niobium are selectively etched using patterned silicon oxide deposited by a low-temperature chemical vapor deposition as a mask and a sulfate flux to selectively remove exposed portions of the tantalum or niobium oxide substrate. |
| 申请公布号 |
JPH04214100(A) |
申请公布日期 |
1992.08.05 |
| 申请号 |
JP19910031255 |
申请日期 |
1991.02.27 |
| 申请人 |
AMERICAN TELEPH & TELEGR CO <ATT> |
发明人 |
JIEFUREI BURUUSU BINDERU;JIEEMUSU TOOMASU KAAGO;RONARUDO JIEEMUSU HORUMUZU;MAIKERU CHIYAARUZU HIYUUZU |
| 分类号 |
C30B33/10;C04B41/53;C04B41/91;C09K13/00;G02B6/13;G02B6/136;G02F1/035;G02F1/05;H01L41/24 |
主分类号 |
C30B33/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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