| 摘要 |
PURPOSE:To enhance sensitivity characteristics by preventing the mixing of dust into a groove part and to reduce manufacturing cost by reducing the number of etching processes or exposing processes and presenting the trouble on the way of etching. CONSTITUTION:P-type impurity is diffused through the N-type epitaxial layer 2 formed to a P-type silicon substrate 1 to form a P-type diffusion layer 10. A gauge resistor 3 for measuring strain is formed to the epitaxial layer 2 and aluminum wiring 11 is applied between the layer 2 and a pad 8. The P-type diffusion layer 10 is covered with an oxide film 9 at this time. Thereafter, the cantilever region 4A and groove part region 7A of the oxide film 13 are removed and rear etching forming a cantilever 4, a wt. part 5 and a rim part 6 is applied to the substrate 1. The groove part 7 between the wt. part 5 and the rim part 6 thrusts through the P-type diffusion layer 10 from the rear to the surface and becomes narrow from the rear to the surface. |
