| 摘要 |
A method of manufacturing a semiconductor integrated circuit comprises steps of forming at least one semiconductor device (1) on a substrate (10), depositing an insulator layer (16) on the substrate so as to bury the semiconductor device, providing a contact hole (17) through the insulator layer for exposing a desired part of the semiconductor device, filling the contact hole by a refractory metal (17a) for electrical connection, covering the insulator layer by a second insulator layer (18), forming a groove (19, 52) through the second insulator layer according to a predetermined interconnection pattern such that the groove passes at least one contact hole and such that a top surface of the refractory metal filling the contact hole and a top surface of the first insulator layer are exposed by the groove, forming a material layer (19a) acting as nuclei for crystal growth of a second refractory metal at a bottom of the groove substantially continuously along the groove, and depositing the second refractory metal in the groove until the groove is substantially filled by a conductor (19b) of the second refractory metal. |
