| 摘要 |
<p>A method of manufacturing a semiconductor wafer by forming an oxidation preventive film on a semiconductor wafer before the semiconductor wafer is loaded in an epitaxial growth furnace, removing the oxidation preventive film in the furnace after the loading, and forming a desired film by epitaxy, wherein the oxidation preventive film is removed by heating in the furnace in a hydrogen atmosphere at a furnace pressure of over 0.0133x105 Pa and below 1.013x105 Pa and at a temperature of over 800 °C and below 1000 °C, or by heating at a furnace pressure of below 5x10-6 Pa and at a temperature of over 800 °C and below 1000 °C.</p> |
