发明名称 |
Power supply clamp circuitry for electrostatic discharge (ESD) protection |
摘要 |
Circuitry is provided which increases the efficiency of electrostatic discharge (ESD) power supply clamping circuitry to sink larger currents during an ESD event on a power supply node. Voltage clamp circuits capable of providing ESD protection to a supply node are described. The voltage clamp circuits include a discharge transistor which is controlled by a control circuit during an ESD event. The control circuit operates in response to a voltage provided on the protected supply node. One embodiment provides a P-channel MOS transistor and a control circuit which drives the gate of the transistor. Another embodiment provides an N-channel MOS transistor and a control circuit which drives the gate of the transistor.
|
申请公布号 |
US6008970(A) |
申请公布日期 |
1999.12.28 |
申请号 |
US19980098829 |
申请日期 |
1998.06.17 |
申请人 |
INTEL CORPORATION |
发明人 |
MALONEY, TIMOTHY J.;KAN, WILSON |
分类号 |
H02H9/04;(IPC1-7):H02H9/00 |
主分类号 |
H02H9/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|