| 摘要 |
There is interposed a buffer film composed of IIa group fluoride and having characteristics of orientation to a surface direction (111), in which mismatching in lattice constant with a crystal element of a semiconductor substrate is large and mismatching in lattice constant with IV-VI group compound ferroelectric substance is small, between the semiconductor substrate having a surface direction (100) and a ferroelectric gate film comprising the IV-VI group compound ferroelectric substance and having characteristics of polarization to the surface direction (111). Since the buffer film is an orientation film in the direction of (111) without influenced by a crystal element of the semiconductor substrate serving as a base material, the ferroelectric gate film can be oriented in the direction of (111) which is the same as the direction of polarization of the ferroelectric substance. |
