| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device, that prevents defects and levels from being generated, and achieves element characteristics that are estimated according to an operation region at design stage. SOLUTION: The semiconductor device has pluralities of regions 2 and 3 comprising different conductive types as the lamination structure of a substrate crystal 1. In the semiconductor device, a junction end face 9 in the plural regions that are not in parallel with the substrate crystal 1 is covered with an insulating film 10, and an epitaxial growth layer 7 is included between the junction end face 9 and the insulating film 10.
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