| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for processing a film in which a silica film (interlayer insulation film) is hardly damaged in stripping a resist pattern by a wet type resist stripping system. SOLUTION: The silica based film with a low dielectric constant formed on a substrate is etched using the resist pattern. Then the silica based film, after being etched through a resist pattern, is treated by a plasma generated with a helium gas. Thus, the silica based film is not damaged in the post process by the wet resist stripping system, and the low dielectric constant can be maintained.
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