发明名称 COOLING CHAMBER FOR CVD EQUIPMENT
摘要 PURPOSE: A cooling chamber for CVD(Chemical Vapor Deposition) equipment is provided to cool rapidly a wafer by improving a structure of the cooling chamber. CONSTITUTION: A lid(30) is used for sealing an upper side of a chamber(20). A gas inflow line(40) is installed at the lid(30). A control valve(40) is installed at an intermediate portion of the gas inflow line(40) in order to control the amount of gas. Nitrogen gas is used as the gas. An entrance portion is installed at one side of the chamber(20) in order to load a wafer. A work space(22) is formed in the inside of the chamber(20). The work space(22) of the chamber(20) is connected with the gas inflow line(40). The work space(22) has a shape of lozenge in order to reduce a loss of the gas received through the gas inflow line(40). A wager loading plate(50) is installed at a center of the space work(22). A cooling water line(10) is installed at the wafer loading plate(50). An exhaust gas line(60) is installed at a lower portion of the chamber(20). A control valve(62) is installed at the exhaust gas line(60) in order to control the amount of exhaust gas. A net(64) is installed at a junction part between the exhaust gas line(60) and the chamber(20).
申请公布号 KR20020084959(A) 申请公布日期 2002.11.16
申请号 KR20010024104 申请日期 2001.05.03
申请人 ANAM SEMICONDUCTOR., LTD. 发明人 KIM, TAE HUN
分类号 H01L21/00;(IPC1-7):H01L21/00 主分类号 H01L21/00
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