| 摘要 |
A semiconductor device comprising: an SOI substrate having a surface semiconductor layer, a gate electrode formed on the surface semiconductor layer via a gate insulating film, first conductive type source/drain regions formed in the surface semiconductor layer of both sides of the gate electrode, a second conductive type drawing diffusion layer formed in the surface semiconductor layer and contacted with at least one of the first conductive type source/drain regions, and a silicide layer which is formed on the surface semiconductor layer to partially or entirely overlie both said at least one of source/drain regions and the drawing diffusion layer, the silicide layer being grounded.
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