发明名称 |
Metal oxide semiconductor field effect transistor for reducing resistance between source and drain and method for fabricating the same |
摘要 |
A MOS field effect transistor for reducing the resistance between a source and a drain includes a gate insulation layer and a gate electrode sequentially formed on a semiconductor substrate includes deep source/drain regions formed in upper portions of the semiconductor substrate at both sides of the gate electrode. Source/drain extension regions are formed in upper portions of the semiconductor substrate extending from the deep source/drain regions toward a channel region below the gate electrode to be thinner than the deep source/drain regions. A first silicide layer having a first thickness is formed on the surface of each of the deep source/drain regions. A second silicide layer having a second thickness thinner than the first thickness of the first silicide layer is formed to extend from the first silicide layer in a predetermined upper portion of each of the source/drain extension regions.
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申请公布号 |
US6806157(B2) |
申请公布日期 |
2004.10.19 |
申请号 |
US20030375437 |
申请日期 |
2003.02.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YANG JEONG-HWAN;KIM YOUNG-WUG |
分类号 |
H01L21/28;H01L21/336;H01L29/78;(IPC1-7):H01L21/336;H01L21/44 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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