| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride semiconductor device by which a high-quality GaN semiconductor layer is acquired from a different species substrate. <P>SOLUTION: This method for manufacturing the nitride semiconductor device comprises a step for growing an AlN nucleation layer on a substrate, a step for growing a GaN buffer layer on the AlN nucleation layer, and a step for annealing the substrate. The AlN nucleation layer is so formed as to have a thickness thicker than a critical radius of a crystal nucleus of AlN and thinner than the critical elastic thickness of the AlN. The GaN buffer layer is so formed as to have a thickness thicker than a critical radius of a crystal nucleus of GaN, and thinner than the critical elastic thickness of the GaN. An annealing time is longer than L<SP>2</SP>/D<SB>Ga</SB>(L; diffusion length of Ga, D<SB>Ga</SB>; diffusion coefficient of Ga in the AlN nucleation layer). <P>COPYRIGHT: (C)2007,JPO&INPIT |
