MANUFACTURE OF THIN FILM TRANSISTOR

摘要

PURPOSE:To obtain a high performance and homogeneous FET characteristic without damaging a gate insulating film and etching stopper by using a mixed gas including CIF3 gas for the etching of active layer and ohmic contact layer. CONSTITUTION:A gate electrode 2 is first formed integrally with a gate line to a first substrate 1 formed of plastic. Thereafter, a silicon nitride gate insulating film 3 and an etching stopper 5 are formed with glow discharge of nitrogen gas, etc. The etching gas consisting of nitrogen gas and CIF gas is crammed within an apparatus and then a pressure is applied thereto. An unwanted area of a-Si: H film in contact with the etching gas may be removed by the etching without giving any damage on the lower gate insulating film and etching stopper.