发明名称 |
Semiconductor device method of generating semiconductor device pattern method of semiconductor device and pattern generator for semiconductor device |
摘要 |
It is an object of the invention to effectively absorb a power noise and to implement the stable operation of a circuit. The invention provides a semiconductor device comprising a bypass capacitor including an MOS structure having a gate electrode formed to be extended from a power wiring region to a portion provided under an empty region which is adjacent to the power wiring region and has no other functional layer, and formed through a capacitive insulating film on a diffusion region having one conductivity type, and a substrate contact formed under a ground wiring region and fixing a substrate potential, wherein the bypass capacitor has a contact to come in contact with the power wiring which is formed on a surface of the gate electrode and has the diffusion region having the one conductivity type and a diffusion region of the substrate contact connected to each other.
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申请公布号 |
US7307333(B2) |
申请公布日期 |
2007.12.11 |
申请号 |
US20040496297 |
申请日期 |
2004.05.21 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ITOH MITSUMI;SAWADA MASATOSHI;HONMA JUNKO;SHIMAZAKI KENJI;TSUJIKAWA HIROYUKI;BENNO HIROSHI |
分类号 |
H01L29/00;G06F17/50;H01L21/82;H01L21/822;H01L27/02;H01L27/04 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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