| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To form an Ni layer having a uniform film thickness on the surface of an Al electrode by an electroless plating method. <P>SOLUTION: A method for manufacturing a semiconductor device comprises the steps of forming an Al metal layer 19 on the surface of a semiconductor substrate 15, forming the Ni layer 20 on the Al metal layer 19 by the electroless plating method, forming a semiconductor chip 2 by making into chips of the semiconductor substrate 15, and bonding a conductive member and the Ni layer 20 by solder. In the step of forming the Al metal layer 19, after a first layer 19a comprising an Al or an Al alloy is formed on the surface of the semiconductor substrate 15, a hetelogeneous material layer 19b with its material different from that of the first layer is formed on the surface of the first layer 19a so that the electrical conductivity of the Al metal layer 19 is assured and the continuity of the Al crystal in the first layer is interrupted. After that, a second layer 19c comprising the same material as that of the first layer 19a is formed on the surface of the heterogeneous material layer 19b. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
