| 摘要 |
PURPOSE:To improve the yield of a dynamic RAM, etc., by relieving DC defects after redundancy switching by disconnecting the route of a leak current passing through a defective element or circuit. CONSTITUTION:Disconnecting points are provided on a dynamic RAM, etc., by forming all or part of prescribed wiring through the uppermost metallic wiring layer. Then, after carrying out a probe test on a formed chip with a prescribed testing device while the chip is in the state of a wafer, wiring modifying data are prepared regarding the disconnection of the above-mentioned disconnecting points on the basis of the probe test results. In addition, the wiring modifying data are transmitted on-line to a wiring modifying device incorporating an EB directly drawing device, FIB device, or laser repair device as a basic constitution and the corresponding disconnecting point is disconnected. Therefore, the yield of the dynamic RAM is raised as indicated by the arrow by disconnecting the route of a leak current formed through a defective element or circuit which has been left as it is in the conventional dynamic RAM, etc. |
