发明名称 MIM Capacitors with Improved Reliability
摘要 A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer.
申请公布号 US2008318378(A1) 申请公布日期 2008.12.25
申请号 US20070765971 申请日期 2007.06.20
申请人 WU CHIH-TA;LEE JASON;WANG CHUNG CHIEN;LIN HSING-LIEN;WANG YU-JEN;TU YEUR-LUEN;HSU CHERN-YOW;LIU YUAN-HUNG;LO CHI-HSIN;TSAI CHIA-SHIUNG;CHANG LUCY;CHEN CHIA-LIN;TSAI MING-CHIH 发明人 WU CHIH-TA;LEE JASON;WANG CHUNG CHIEN;LIN HSING-LIEN;WANG YU-JEN;TU YEUR-LUEN;HSU CHERN-YOW;LIU YUAN-HUNG;LO CHI-HSIN;TSAI CHIA-SHIUNG;CHANG LUCY;CHEN CHIA-LIN;TSAI MING-CHIH
分类号 H01L21/20;H01L21/8242 主分类号 H01L21/20
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