| 摘要 |
<p>A semiconductor device capable of improving response speed by low resistance value of source contact plug is provided to improve breakdown voltage by forming a plurality of source contact plugs(SCT) with line type. A first and a second junction regions(D-1, D-2) are formed in an active region(AC) of a semiconductor substrate. A gate(G) is formed in the active region between the first junction region and the second junction region. At least one or more source contact plug(SCT) is formed on the gate and the first junction region. At least one or more drain contact plug(DCT) is formed on the second junction region. The source contact plug has a lower resistance value than the drain contact plug. The source and drain contact plugs are a hole type. The number of source contact plug is more than the drain contact plug. The source contact plug is a line type having a larger width than the drain contact plug. The source and drain contact plugs are asymmetry.</p> |
