METHOD FOR FABRICATING CAPACITOR HAVING RUTHENIUM STORAGE NODE WITH EMBOSSING SURFACE

摘要

A method for manufacturing a capacitor having a ruthenium storage node of an embossing substrate is provided to increase an electrostatic capacity of a cell by increasing an effective surface area by forming the surface of the storage node with an embossing type. An insulating layer(25) having a concave type open area exposing the contact plug is formed in the upper part of the substrate(21) in which the contact plug(23) is formed. The embossing induced layer pattern(27) is formed in the side wall of the open area. The storage node(28B) including an embossing surface selectively is formed in the embossing induced layer pattern inside the open region. A dielectric layer(29) is formed on the insulating layer including the storage node. The plate electrode(30) is formed on the dielectric layer. The storage node is composed of a ruthenium layer. The embossing induced layer pattern is deposited by using the chemical deposition method or the atomic layer deposition method.